中文标题：Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications

英文标题：Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications

来源期刊：Nature Publishing Group

基金项目：

作  者：Peisen Liu,Sulei Fu,Boyuan Xiao,Xinchen Zhou,Qiufeng Xu,Jiajun Gao,Shuai Zhang,Rui Wang,Cheng Song,Fei Zeng,Weibiao Wang,Feng Pan

作者单位：Key Laboratory of Advanced Materials [MOE], School of Materials Science and Engineering, Tsinghua University, Beijing, China
SHOULDER Electronics Limited, Wuxi, Jiangsu, China

摘  要：With the surge in fifth-generation (5G) wireless systems and escalating growth of data traffic, the push for higher carrier frequencies with wider bandwidths intensifies. This work reveals the outstanding capabilities of wafer-level longitudinal leaky surface acoustic wave (LLSAW) devices on the lithium niobate on insulator (LNOI) platform in scaling SAW technology beyond 4 GHz by mass-produced lithography. Leveraging SiC-based LNOI, the fabricated LLSAW resonators showcase remarkable quality factor (Q), scalable electromechanical factor $$\left({k}_{\text{eff}}^{2}\right)$$ from 14% to 28%, and record high figure-of-merit (FoM) of 166 to 222 at 5–6 GHz. Targeted for diverse bands, LLSAW filters with adaptable bandwidths have been realized on specific LN-on-SiC platforms. The filters covering the n79 full band with a minimum insertion loss (ILmin) of 0.85 dB and the 5 GHz Wi-Fi full band with an ILmin of 1.62 dB, have been demonstrated for the first time. These findings position LLSAW on LN-on-SiC platform as a promising commercial-grade candidate for pushing the SAW paradigm towards high frequency and wideband filtering.

全文链接： https://www.nature.com/articles/s41378-025-01007-0